A team at the University of Bristol has developed the SLCFET, a groundbreaking transistor structure that exploits the latching effect in GaN material to increase speed and power, driving future developments towards 6G.

Self-driving cars that eliminate traffic jams, getting an instant medical diagnosis without leaving your home, or feeling the touch of a loved one across a continent may sound like science fiction.

However, new research led by the University of Bristol and published in the journal Nature Electronics could bring these possibilities closer to reality, thanks to groundbreaking breakthroughs in semiconductor technology.

These futuristic concepts rely on the ability to communicate and transfer massive amounts of data far faster than existing networks. To achieve this, physicists have developed an innovative method that could speed up data transfers between many users, potentially even on a global scale.

Innovation drives infinite possibilities

Martin Kuball, Professor of Physics at the University of Bristol and co-lead author of the study, said: "Over the next decade, technologies that were previously almost unimaginable will become widespread, revolutionising the human experience. The potential benefits are equally profound, ranging from healthcare advances through remote diagnosis and surgery, to virtual classrooms and even virtual holidays."

Advanced driver assistance systems also have great potential to improve road safety and industrial automation efficiency. The potential for 6G applications is endless and can only be maximized by human imagination. Therefore, our innovative semiconductor discoveries are exciting and will help to promote these developments quickly and on a large scale.

It is widely believed that the move from 5G to 6G requires a major upgrade in semiconductor technology, circuits, systems and related algorithms. For example, the key semiconductor component - RF amplifiers made of gallium nitride (GaN) material - must significantly increase speed, generate more power and operate more reliably.

Unleashing the power of next-generation amplifiers

An international team of scientists and engineers has tested a new architecture that significantly improves the performance of GaN amplifiers. The breakthrough was made possible by the discovery of a latching effect in GaN that significantly improves the performance of RF devices. These next-generation devices use parallel channels and require sub-100nm side fins - a type of transistor that controls the flow of current through the device.

Dr Akil Shahji, co-first author and Honorary Research Fellow at the University of Bristol, explained: "Working with partners, we piloted a device technology called Superlattice Castle Field Effect Transistor (SLCFET), where more than 1,000 fins less than 100nm wide are used to drive the current. Although SLCFETs showed the highest performance in the W-band frequency range (equivalent to 75GHz to 110GHz), the physics behind this was not well understood."

"We recognised it was the latching effect in GaN that enabled the high RF performance."

Discovering and verifying latch-up

The researchers then needed to use both ultra-precise electrical measurements and optical microscopy to pinpoint where this effect occurs for further study and understanding. After analysing more than 1,000 fins, the study found that the effect occurs in the widest fins.

Dr Akil Shaji works at the University of Bristol's Centre for Device Thermal Imaging and Reliability (CDTR), which brings together scientists from around the world to develop the next generation of semiconductor electronic devices. Image credit: University of Bristol

Professor Kubal, who is also the Royal Academy of Engineering Chair in Emerging Technologies, added: "We also developed a 3D model using a simulator to further validate our observations. The next challenge was to investigate the reliability of the latch-up effect in real applications. The device was subjected to rigorous long-term testing and the results showed that it did not adversely affect the reliability or performance of the device."

"We found that the key factor driving this reliability was a thin dielectric coating around each fin. But the main conclusion is clear - the latch-up effect can be used for countless practical applications and may change people's lives in many different ways in the future."

Looking ahead to future applications

Next steps include further improving the power density of the devices, thereby delivering higher performance and serving a wider range of users. Industry partners will also bring these next-generation devices to the commercial market.

Researchers at the University of Bristol are at the forefront of improving electrical performance and efficiency in a variety of different applications and environments.

Professor Kubal leads the Centre for Device Thermal Imaging and Reliability (CDTR), which is dedicated to developing next-generation semiconductor electronic devices for net-zero emissions, communications and radar technologies. The centre also focuses on using wide-bandgap and ultra-wide-bandgap semiconductors to improve device thermal management, electrical performance and reliability.

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