Home News Micron confirms: Storage shortages have been ongoing for some time

Micron confirms: Storage shortages have been ongoing for some time

2026-05-27

Micron Technology, Inc., a major U.S. memory manufacturer, believes that the shortage of high bandwidth memory (HBM), NAND flash memory, and DRAM may continue into the rest of this year (2026).

The Research Report Published by JPMorgan Chase

Wccftech reported on the 25th that JPMorgan Chase released a research report stating that Micron executives, speaking at the 54th Annual Global Technology, Media and Communications Conference (TMC) in Boston, indicated that the tight supply situation in the memory market is expected to continue beyond 2026, as high-performance memory chips significantly improve the computing performance of AI models.

Micron also believes that this supply shortage is expected to persist for some time, as the production capacity of HBM, NAND, and DRAM chips is unlikely to increase in the short term.

JPMorgan further analyzed several factors contributing to this tightening in the memory market. First, as memory technology evolves, the rate of performance improvement is slowing, and the die sizes of next-generation HBM are becoming larger. Furthermore, extreme ultraviolet (EUV) lithography plays a crucial role in the manufacturing process of the latest DRAM.

According to the report, Micron executives pointed out that driven by the demand for AI applications, its "1-gamma (1-γ)" process, calculated on a total-wafer-out basis, will become the highest-volume DRAM process in the company's history. HBM, used in AI GPUs, primarily relies on the vertical stacking of DRAM modules before packaging the entire chip. Micron stated that it will continue to deeply integrate EUV wafer lithography technology with its 1-gamma memory production line.

About the Production

In terms of production volume, Micron revealed that, benefiting from strong AI demand, the ramp-up speed of HBM4 production is twice as fast as that of the previous HBM3. Furthermore, the next-generation HBM4E memory is expected to officially begin production ramp-up in 2027, with its first samples using DRAM modules manufactured using a 1-gamma process.

Finally, Micron pointed out that the expansion of AI context windows, coupled with increased inference workloads, has allowed the company to expand its market share in the solid-state drive (SSD) market.

Source: moneyDJ

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